Hanghui Chen is an Assistant Professor of Physics, NYU Shanghai; Global Network Assistant Professor, NYU. Prior to joining NYU Shanghai, he was a post-doctoral fellow at Columbia University. He holds a Ph.D from Yale University and a B.S. from Peking University.
Professor Chen’s research interests include first-principles modelling and design of complex meta-materials, in particular transition metal oxide heterostructures; ab initio calculations of ground state and excited state properties of correlated systems; as well as method development in materials theory. His work has appeared in Phys. Rev. Lett., Nano Lett. and Advanced Materials.
H. Chen, D. P. Kumah, A. S. Disa, F. J. Walker, C. H. Ahn, S. Ismail-Beigi, “Modifying the electronic orbitals of nickelate heterostructures via structural distortions”, Phys. Rev. Lett. 110, 186402 (2013)
H. Chen, A. J. Millis, and C. A. Marianetti, “Engineering Correlation Effects via Artificially Designed Oxide Superlattices”, Phys. Rev. Lett. 111,116403 (2013)
H. Chen, Q. Qiao, M. S. J. Marshall, A. B. Georgescu, A. Gulec, P. J. Phillips, R. F. Klie, F. J. Walker, C. H. Ahn and S. Ismail-Beigi, “Reversible modulation of orbital occupations via an interface-induced polar state in metallic manganites”, Nano Lett. 14, 4965 (2014).
A. S. Disa, D. P. Kumah, A. Malashevich, H. Chen, D. A. Arena, E. D. Specht, S. Ismail-Beigi, F. J. Walker and C. H. Ahn, “Inter-elemental orbital tuning in oxides”, Phys. Rev. Lett. 114, 026801 (2015).